Adaptive Gate-Level Voltage Scaling Using Dual Voltage Domino Logic

نویسندگان

  • Christopher Batten
  • Benton Calhoun
چکیده

Power consumption is a growing problem in modern digital design, and due to the quadratic relationship between power consumption and supply voltage, significant low-power research has focused on reducing the supply voltage. Adaptive gate-level voltage scaling (AGVS) is a novel design technique which dynamically adjusts the supply voltage at the gate-level to maximize energy efficiency. We propose dual voltage domino logic (DVDL) as a new logic style that is suitable for AGVS designs and use a 32-bit DVDL ripple carry adder to investigate the potential for AGVS. Several alternative control logic schemes are discussed including single-bit versus multi-bit carrychecks and sequential precharging versus concurrent precharging. Simulation results show a 13% savings in energy when using an AGVS adder in place of a standard domino logic adder in the ALU of a simple RISC processor.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Domino Logic Circuit with Reduced Leakage and Improved Noise Margin

As the technology is continuously scaled, leakage currents become a major contributor to the total power dissipation. A reduction in power supply voltage is necessary to reduce dynamic power and avoid reliability problems in deep sub-micron (DSM) regimes. Threshold voltage reduction accompanies supply voltage scaling to maintain the performance, but it exponentially increases the subthreshold l...

متن کامل

Dual Threshold Voltage Domino Logic Synthesis for High Performance with Noise and Power Constraint

We introduce a new dual threshold voltage technique for domino logic. Since domino logic is much more sensitive to noise, noise margins have to be taken into account when applying dual threshold voltages to domino logic. To guarantee the signal integrity in domino logic, we carefully consider the effect of transistor sizing and threshold voltage selection. For optimal design, tradeoffs need to ...

متن کامل

NP-Domino, Ultra-Low-Voltage, High-Speed, Dual-Rail, CMOS NOR Gates

In this paper, novel ultra low voltage (ULV) dual-rail NOR gates are presented which use the semi-floating-gate (SFG) structure to speed up the logic circuit. Higher speed in the lower supply voltages and robustness against the input signal delay variations are the main advantages of the proposed gates in comparison to the previously reported domino dual-rail NOR gates. The simulation results i...

متن کامل

FinFET domino logic with independent gate keepers

Scaling of single-gate MOSFET faces great challenges in the nanometer regime due to the severe shortchannel effects that cause an exponential increase in the sub-threshold and gate-oxide leakage currents. Double-gate FinFET technology mitigates these limitations by the excellent control over a thin silicon body by two electrically coupled gates. In this paper a variable threshold voltage keeper...

متن کامل

Novel Static Ultra Low-Voltage and High Speed CMOS Boolean Gates

In this paper we present robust and high performance static ultra low-voltage CMOS binary logic. The delay of the ultra low-voltage logic presented are less than 10% of the delay of standard CMOS inverters. The logic gates presented are designed using semi floating-gate transistors and a current boost technique. The boolean gates resemble domino CMOS. The performance and robustness of different...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2007